An enhanced model for InGaP/GaAs heterojunction bipolar transistor

► An improved VBIC model for InGaP/GaAs HBTs is developed. ► Novel current expression is proposed by considering the heterojunction effect. ► Collector capacitance and transit time are improved with dependence on biases. ► Corresponding extraction procedure is proposed. ► Model is verified by the DC, AC and power measurements.