کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10365170 871952 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Dielectric breakdown characteristics and interface trapping of hafnium oxide films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Dielectric breakdown characteristics and interface trapping of hafnium oxide films
چکیده انگلیسی
The reliability and integrity of HfO2 prepared by direct sputtering of hafnium were studied. By monitoring the current-voltage and current-stressing duration characteristics, we found a significant charge trapping effect in thin film with very short stressing time (<30 s) but the stress-induced trap generation is insignificant. The breakdown characteristics of hafnium gate oxide were also investigated in detail. We found that several soft breakdowns take place before a hard breakdown. Area and stress-voltage effects of the time-dependent dielectric breakdown were observed. Results suggest that the soft and hard breakdowns should have different precursor defects. A two-layer breakdown model of is proposed to explain these observations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 36, Issue 1, January 2005, Pages 29-33
نویسندگان
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