کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10365170 | 871952 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dielectric breakdown characteristics and interface trapping of hafnium oxide films
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
The reliability and integrity of HfO2 prepared by direct sputtering of hafnium were studied. By monitoring the current-voltage and current-stressing duration characteristics, we found a significant charge trapping effect in thin film with very short stressing time (<30Â s) but the stress-induced trap generation is insignificant. The breakdown characteristics of hafnium gate oxide were also investigated in detail. We found that several soft breakdowns take place before a hard breakdown. Area and stress-voltage effects of the time-dependent dielectric breakdown were observed. Results suggest that the soft and hard breakdowns should have different precursor defects. A two-layer breakdown model of is proposed to explain these observations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 36, Issue 1, January 2005, Pages 29-33
Journal: Microelectronics Journal - Volume 36, Issue 1, January 2005, Pages 29-33
نویسندگان
N. Zhan, M.C. Poon, Hei Wong, K.L. Ng, C.W. Kok,