کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10365226 | 871971 | 2015 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of second-order temperature jump in Metal-Oxide-Semiconductor Field Effect Transistor with Dual-Phase-Lag model
ترجمه فارسی عنوان
اثر ترمینال درجه دوم درجه دوم در ترانزیستور اثر میدان الکترود-نیمه هادی فلزی با مدل دوگانه فاز
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کلمات کلیدی
مگنت انتقال حرارت، فونون، مدل دوگانه فاز،
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
چکیده انگلیسی
The present numerical investigation is concerned with the role of second-order temperature jump in a horizontal planar micro-channel heat transfer. We solve numerically Dual-Phase-Lag model in a two dimensional configuration coupled with a new jump boundary condition. The nanodevice of model consists of Metal-Oxide-Semiconductor Field Effect Transistor with either uniform or non-uniform heat generation. A new temperature jump boundary condition of first and second order is used especially in the oxide-semiconductor interface. The finite element method is used to bring forth the results for a 10Â nm channel length of the transistor. Thermal properties of transistor device have been investigated for different orders of the temperature jump boundary condition. It has already been deduced that the increasing orders of temperature jump boundary condition lead to an increase of phonon-wall collisions. This new condition can lead to a significant increase in the heat flux and the calculated lattice temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 46, Issue 1, January 2015, Pages 67-74
Journal: Microelectronics Journal - Volume 46, Issue 1, January 2015, Pages 67-74
نویسندگان
F. Nasri, M.F. Ben Aissa, H. Belmabrouk,