کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10365230 | 871971 | 2015 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A resistive-feedback LNA in 65Â nm CMOS with a gate inductor for bandwidth extension
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: A resistive-feedback LNA in 65Â nm CMOS with a gate inductor for bandwidth extension A resistive-feedback LNA in 65Â nm CMOS with a gate inductor for bandwidth extension](/preview/png/10365230.png)
چکیده انگلیسی
In order to get a wideband and flat gain, a resistive-feedback LNA using a gate inductor to extend bandwidth is proposed in this paper. This LNA is based on an improved resistive-feedback topology with a source follower feedback to match input. A relative small inductor is connected in series to transistor׳s gate, which boosts transistor׳s effective transconductance, compensates gain loss and then leads the proposed LNA with a flat gain and wider bandwidth. Moreover, the LNA׳s noise is partially inhibited by the gate inductor, especially at high frequency. Realized in standard 65-nm CMOS process, this LNA dissipates 12 mW from a 1.5-V supply while its core area is 0.076 mm2. Across 0.4-10.6 GHz band, the proposed LNA provides 9.5±0.9 dB power gain (S21), better than â11-dB input matching, 3.5-dB minimum noise figure, and higher than â17.2-dBm P1 dB.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 46, Issue 1, January 2015, Pages 103-110
Journal: Microelectronics Journal - Volume 46, Issue 1, January 2015, Pages 103-110
نویسندگان
Dong Huang, Shengxi Diao, Weiqiang Qian, Fujiang Lin,