کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10365488 | 872100 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The aligned Si nanowires growth using MW plasma enhanced CVD
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The aligned Si nanowires growth using MW plasma enhanced CVD The aligned Si nanowires growth using MW plasma enhanced CVD](/preview/png/10365488.png)
چکیده انگلیسی
New and simple modification of vapor-liquid-solid process for Si nanowires growth based on microwave plasma enhanced chemical vapor deposition that uses solid-state Si target as a source of Si atoms was developed. The method was temperature and pressure controlled evaporation of solid phase of Si source in hydrogen microwave plasma. Aligned growth of Si nanowires was performed in local electric field by applying of constant negative bias to substrate holder. Deposited Si nanowires were studied by scanning electron microscopy (SEM), Raman and photoluminescence spectroscopy. Correlation between photoluminescence spectra and Si nanowires properties were studied.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 36, Issue 7, July 2005, Pages 634-638
Journal: Microelectronics Journal - Volume 36, Issue 7, July 2005, Pages 634-638
نویسندگان
N.N. Dzbanovsky, V.V. Dvorkin, V.G. Pirogov, N.V. Suetin,