کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10365493 872100 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
CMOS compatible bistable electromagnetic microvalve on a single wafer
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
CMOS compatible bistable electromagnetic microvalve on a single wafer
چکیده انگلیسی
This paper presents our work in the bistable electromagnetic actuated microvalve. The microvalve is entirely fabricated by surface micromachining on top of a single Si (silicon) substrate. The microvalve has an overall diameter of 1600 μm and the overall height of 600 μm, including the wafer thickness. The bistable mechanism is achieved by integrating an electroplated micro CoNiMnP magnet on the membrane. The microvalve was tested in the flow of deionized (DI) water at 0-50 μL/min. The latching/unlatching of the microvalve was performed to control the flow DI water at 30 μL/min, it required the operational current of 0.38 A and the power of 1.17 W. The latching/unlatching response time of the microvalve is 10 ms, with the leaking rate of 0.16-0.8 μL/min.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 36, Issue 7, July 2005, Pages 667-672
نویسندگان
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