Preparation and characteristics of the wide gap semiconductor Mg0.18Zn0.82O thin film by L-MBE

The high purity ZnO ceramic target and the (MgO)0.1(ZnO)0.9 target were fabricated. The wurtzite-phase ZnO thin film and ternary MgxZn1−xO thin film were grown on sapphire (0001) substrates by laser molecular beam epitaxy (L-MBE) from the sintered ceramic targets separately. The films' transmittance spectra at room temperature for the ZnO film and the MgxZn1−xO film were measured and compared while their room temperature photoluminescence spectra were done. The band-gap modulation is realized from 3.31 eV for the ZnO film to 3.64 eV for the MgxZn1−xO alloy film. The Mg content x in the MgxZn1−xO alloy film was determined to be 0.18.