Influence of the surface roughness of the bottom electrode on the resistive-switching characteristics of Al/Al2O3/Al and Al/Al2O3/W structures fabricated on glass at 300 °C

The resistive switching characteristics of MIM structures based on Al2O3, are highly dependent on the surface roughness of the bottom electrode, the thickness of Al2O3 and the current compliance which limits the electron density flowing through both top/bottom electrodes. These devices are based on Al2O3 and fabricated on glass at 300 °C.