کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10365689 872161 2014 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Failure analysis and improvement of 60 V power UMOSFET
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Failure analysis and improvement of 60 V power UMOSFET
چکیده انگلیسی
In this paper, the failure modes of a 60 V power UMOSFET firstly have been discussed by analyzing the test data of the die, and our hypothesis is that the merger of the P-base regions under the trench leads to larger on-resistance and threshold voltage of 60 V UMOSFET. To further verify the hypothesis, the formula for the resistance of the drift region has been derived, and the simulating model of UMOSFET has been given with various mergers of the P-base regions. Then the simulation model has been corrected and the parameters of UMOSFET have been optimized. The re-design of 60 V UMOSFET has been taped out successfully, with its electric parameters totally meeting the requirements.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 54, Issue 12, December 2014, Pages 2782-2787
نویسندگان
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