کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10365689 | 872161 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Failure analysis and improvement of 60Â V power UMOSFET
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
In this paper, the failure modes of a 60Â V power UMOSFET firstly have been discussed by analyzing the test data of the die, and our hypothesis is that the merger of the P-base regions under the trench leads to larger on-resistance and threshold voltage of 60Â V UMOSFET. To further verify the hypothesis, the formula for the resistance of the drift region has been derived, and the simulating model of UMOSFET has been given with various mergers of the P-base regions. Then the simulation model has been corrected and the parameters of UMOSFET have been optimized. The re-design of 60Â V UMOSFET has been taped out successfully, with its electric parameters totally meeting the requirements.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 54, Issue 12, December 2014, Pages 2782-2787
Journal: Microelectronics Reliability - Volume 54, Issue 12, December 2014, Pages 2782-2787
نویسندگان
Wang Debo, Feng Quanyuan, Chen Xiaopei, Jin Tao,