| کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن | 
|---|---|---|---|---|
| 10365709 | 872161 | 2014 | 5 صفحه PDF | دانلود رایگان | 
عنوان انگلیسی مقاله ISI
												Reliability matrix solution to multiple mechanism prediction
												
											ترجمه فارسی عنوان
													راه حل ماتریس اطمینان برای پیش بینی مکانیزم چند 
													
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																																												کلمات کلیدی
												
											موضوعات مرتبط
												
													مهندسی و علوم پایه
													مهندسی کامپیوتر
													سخت افزارها و معماری
												
											چکیده انگلیسی
												We present a method for predicting the failure rate and thus the reliability of an electronic system by summing the failure rate of each known failure mechanism. We use a competing acceleration factor methodology by combining the physics of failure for each mechanism with its own effect as observed by High/Low temperature and High/Low voltage stresses. Our Multiple High Temperature Overstress Life-test (M-HTOL) method assumes that the lifetime of each failure mechanism follows constant rate distribution whereby each mechanism is independently accelerated by its own stress factors. Stresses include temperature, frequency, current, and other factors that can be entered into a reliability model. The overall failure rate thus, also follows an exponential distribution and is described as the standard FIT (Failure unIT or Failure in Time). This method combines mathematical models for known failure mechanism and solves them simultaneously for a multiplicity of accelerated life test results to find a consistent set of weighting factors for each mechanism. The result of solving the system of equations is a more accurate and a unique combination for each system model by proportional summation of each of the contributing failure mechanisms.
											ناشر
												Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 54, Issue 12, December 2014, Pages 2951-2955
											Journal: Microelectronics Reliability - Volume 54, Issue 12, December 2014, Pages 2951-2955
نویسندگان
												Joseph B. Bernstein, Moti Gabbay, Ofir Delly, 
											