کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10400978 | 891133 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Partially stabilized zirconia substrate for chemical vapor deposition of free-standing diamond films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
In this work we investigated the use of partially stabilized zirconia (PSZ) as the substrate for deposition of CVD diamond films. The polycrystalline PSZ substrates were sintered at high temperatures and the results showed that this material has unique properties which are very appropriated for the growth of free-standing diamond films. The diamond nucleation density on PSZ is high, even without seeding, and the CVD diamond film was totally released from the substrate after the deposition process, without cracking. Micro-Raman analysis revealed that the free-standing diamond film had a good crystallinity on both surfaces with practically no stress in the structure. The same PSZ substrate can be reutilized for the deposition of a large number of diamond films. The average growth rate is about 5-6 μm/h in a microwave plasma reactor at 2.5 kW. The deposition process causes the reduction of ZrO2, producing ZrC. The high mobility of oxygen in the zirconia matrix at high temperature would probably help to etch the interface region between the substrate surface and the diamond film, decreasing the adhesion strength and eliminating some defects in the film structure related to non-diamond carbon phases.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 14, Issue 10, October 2005, Pages 1605-1610
Journal: Diamond and Related Materials - Volume 14, Issue 10, October 2005, Pages 1605-1610
نویسندگان
M.M. Lucchese, C.L. Fritzen, A.S. Pereira, J.A.H. da Jornada, N.M. Balzaretti,