کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10401020 891136 2005 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
High surface area submicrometer-sized β-SiC particles grown by shape memory synthesis method
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
High surface area submicrometer-sized β-SiC particles grown by shape memory synthesis method
چکیده انگلیسی
A high surface area and non-microporous submicrometer-sized β-SiC material was successfully obtained according to the Shape Memory Synthesis (SMS) method. The attack by SiO vapors of a nanodiamond preform with sp3-bound carbon, at 1200-1300 °C under dynamic vacuum, formed β-SiC nanoparticles by carboreduction of the SiO vapors. These β-SiC nanoparticles had a mean size distribution centered at 10 nm and a specific surface area of 140 m2/g. The high carbon to carbide conversion obtained and the location of the remaining unreacted carbon in the core of the β-SiC nanoparticles allowed a direct use of the material as a catalyst support without any stabilizing post-synthesis oxidative treatment. The material showed dispersive properties and a good resistance towards oxidation, due to the presence of a thick and partially oxidized protecting amorphous coating, preventing from the extensive oxidation of SiC into silica.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 14, Issue 8, August 2005, Pages 1353-1360
نویسندگان
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