کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10401025 | 891136 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ion implantation induced phase transformation in carbon and boron nitride thin films
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
The mechanism behind energetic ion impact induced stress reduction in highly stressed tetrahedral amorphous carbon and cubic boron nitride thin films is investigated by real time in situ spectroscopic ellipsometry and ex situ electron microscopy. Highly stressed carbon and boron nitride films were grown by filtered cathodic vacuum arc and RF magnetron sputtering, respectively. The films were then implanted by 5-10 keV argon ions and the film optical properties and thickness monitored in situ by spectroscopic ellipsometry. In both cases the films were observed to expand due to a reduction in the density of the ion-modified layer. Cross-sectional transmission electron microscopy and electron energy loss spectroscopy of the carbon films showed that this reduction in density is associated with a conversion of diamond-like bonding to graphite-like bonding. In situ stress measurements performed on the boron nitride films revealed a simultaneous reduction in stress with expansion of the material.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 14, Issue 8, August 2005, Pages 1395-1401
Journal: Diamond and Related Materials - Volume 14, Issue 8, August 2005, Pages 1395-1401
نویسندگان
T.W.H. Oates, L. Ryves, F.A. Burgmann, B. Abendroth, M.M.M. Bilek, D.R. McKenzie, D.G. McCulloch,