کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10401249 | 891171 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Microwave plasma enhanced chemical vapor deposition of diamond in silicon pores
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this work, the feasibility of growing boron-doped diamond coatings, approximately 0.3 μm thick, on thin silicon substrates that have 50-μm diameter pores etched 125 μm deep has been demonstrated using deep reactive ion etching (DRIE) in combination with chemical-mechanical polishing (CMP). Using a microwave plasma enhanced chemical vapor deposition (MPECVD) cyclic growth process consisting of carburization, bias-enhanced nucleation, diamond growth and boron-doped diamond growth, uniform diamond coatings throughout the pores have been obtained. The coatings were characterized by Raman spectroscopy and scanning electron microscopy and the secondary electron emission coefficients were found to increase from 4 to 10 between 200 and 1000 V, in agreement with reported values for thicker polycrystalline diamond films grown under similar conditions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 14, Issue 2, February 2005, Pages 220-225
Journal: Diamond and Related Materials - Volume 14, Issue 2, February 2005, Pages 220-225
نویسندگان
D.C. Gautier, R.E. Muenchausen, L.G. Jacobsohn, R.W. Springer, R.K. Schulze, A. Desia,