کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10403016 892181 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Silicon under pressure: even GaN takes stick
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Silicon under pressure: even GaN takes stick
چکیده انگلیسی
IEDM 2005 will take place in Washington, DC, in early December. It is one of those great shows, a spell-binding, amazing silicon circus. In the big top are packed the pressured performers, having to master new acts of ever increased agility, stability and endurance. Silicon shows the strain in its need of other material assistance. And a host of side shows, big dippers, swings and roundabouts, put compound semiconductors and MEMS devices through paces that lend lustre to the whole performance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: III-Vs Review - Volume 18, Issue 8, November 2005, Pages 30-33
نویسندگان
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