Excellence award for InP but SiC and GaN come crowding in

Vitesse was recently presented with Frost & Sullivan's 2005 'Technology Innovation of the Year Award', for its innovative $6m VIP-2 InP HBT technology. But more recent DARPA awards focus on GaN and SiC. With contracts worth between $125.8m-$163.2m, GaN devices, with SiC substrates, can hardly fail to be seen as InP's successors.