کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10409431 | 894026 | 2005 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A single-pole double-throw (SPDT) circuit using lateral metal-contact micromachined switches
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A dc 6 GHz single-pole double-throw (SPDT) switching circuit that employs lateral metal-contact micromachined switches is investigated. The lateral metal-contact switch consists of a set of quasi-finite ground coplanar waveguide (FGCPW) transmission lines and a high-aspect-ratio cantilever beam. A single-pole single-throw (SPST) lateral micromachined switch has an insertion loss of 0.08 dB and a return loss of 32 dB at 5 GHz. The isolation is 32 dB at 5 GHz. The measured insertion loss of the SPDT switching circuit is below 0.75 dB, whereas the return loss is higher than 19 dB at 5 GHz. The isolation at 5 GHz is 33 dB. Pull-in voltage of the switch is 23.3 V and switching time is 35 μs. The size of the SPDT switching circuit is 1.2 mm Ã 1.5 mm. A main advantage of this circuit structure is simple fabrication process with high yield (>90%) based on the deep reactive ion etching (DRIE) technique of silicon-on-insulator (SOI) wafer and shadow mask technology.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 121, Issue 1, 31 May 2005, Pages 187-196
Journal: Sensors and Actuators A: Physical - Volume 121, Issue 1, 31 May 2005, Pages 187-196
نویسندگان
M. Tang, A.-Q. Liu, A. Agarwal, Z.-S. Liu, C. Lu,