کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10410753 | 894498 | 2005 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
An application of Raman spectroscopy on the measurement of residual stress in porous silicon
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: An application of Raman spectroscopy on the measurement of residual stress in porous silicon An application of Raman spectroscopy on the measurement of residual stress in porous silicon](/preview/png/10410753.png)
چکیده انگلیسی
The porous silicon film, at micron level, and the bulk silicon substrate is a basic structure in MEMS components. The residual stress, due to the lattice mismatch between the film and the substrate, exists on the interface and may cause cracking and damaging on the component. Micro-Raman spectroscopy is an optical measurement method that was rapidly applied into the fields of chemistry, physics, material science and mechanics. In this paper, the method is introduced and applied to the study of the stress problems in porous silicon as follows. (1) In the electrochemical etching technique for porous silicon preparation, the distribution of the tensile residual stress along the transitional region between etched and un-etched area is experimentally studied and the result reveals the stress is continuous across the region. In the etched region it reaches GPa level, and in the transition region the gradient of the stress is high. (2) In chemical etching preparation of porous silicon, the residual stress rises up seriously in the cracked area, up to 0.92Â GPa. With the porosity increasing, the tensile stress on the porous silicon film increases accordingly. The appearance of the porous silicon film surface is also given by metalloscope and atomic force microscope. The structure of the micro-pores is expected to have a close relation with the distribution of the residual stress.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics and Lasers in Engineering - Volume 43, Issue 8, August 2005, Pages 847-855
Journal: Optics and Lasers in Engineering - Volume 43, Issue 8, August 2005, Pages 847-855
نویسندگان
Yilan Kang, Yu Qiu, Zhenkun Lei, Ming Hu,