کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10412310 | 894885 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High isolation X-band MEMS capacitive switches
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This paper presents the design and optimization of the X-band microelectromechanical system (MEMS) capacitive switch using an electrical model and a mechanical model. The electrical model can accurately extract the resistance, capacitance and inductance of the switch. Based on the electrical model, a single-bridge switch and double-bridge switch with serpentine folded suspensions are proposed to achieve higher isolation compared to a typical MEMS capacitive switch at X-band frequencies. The measurement results show an isolation of 16.5-28Â dB for single-bridge switch and 25-35Â dB for double-bridge switch, both at 10-13Â GHz. The mechanical performance is measured using an optoelectronic laser interferometric system. Due to the low effective spring constant of the serpentine folded suspensions, only 20.4Â V of pull-down voltage is required. An improved fabrication process using surface and bulk micromachining techniques is also described.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 120, Issue 1, 29 April 2005, Pages 241-248
Journal: Sensors and Actuators A: Physical - Volume 120, Issue 1, 29 April 2005, Pages 241-248
نویسندگان
M. Tang, A.B. Yu, A.Q. Liu, A. Agarwal, S. Aditya, Z.S. Liu,