Self-consistent analysis of electron transport in GaN/AlGaN super lattice nanostructure for light emission

Schrödinger and Poisson's equation have been solved self-consistently to investigate the electron transport in GaN/AlGaN super lattice nanostructure. Effect of applied bias along with spatial variation in effective mass of GaN and AlGaN has been taken in to account for realizing the electron confinement and recombination in one dimensional super lattice nanostructure. We have investigated in detail the influence of applied bias and Aluminum mole composition on Eigen energy, probability density and recombination rate. Here, we have determined the electron concentration through self-consistent solutions of Schrodinger and Poisson's equations. The electron concentration deduced was 1.75 × 1020 cm−3 under applied bias voltage of 5 V with Aluminum mole fraction of 20%. The probability density along X direction clearly reveals that electrons are confined very well within the central region of superlattice nanostructure.