High performance top-gate field-effect transistors based on poly(3-alkylthiophenes) with different alkyl chain lengths

- Top-gate poly(3-alkylthiophene) (P3AT) FETs are fabricated by a spin-coating method.
- The top-gate P3AT FETs exhibit high field-effect mobility and operational stability.
- High performance is obtained irrespective of the permittivity of the gate insulator.