کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10566003 | 972154 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fullerene-based bistable devices and associated negative differential resistance effect
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have observed bistability in single layer devices made from fullerenes (C60) mixed with polystyrene (PS) and sandwiched between two Al electrodes. By merely changing the concentration of C60 in PS we found three distinctly different device properties, namely a true insulator, a bistable device switching between an OFF and an ON state having ON-OFF current ratios larger than 104 and a write-once, read-many times (WORM) device. An additional negative differential resistance (NDR) was observed in the ON state of both the bistable and WORM devices leading to multilevel switching capability of the devices. This opens up a wide range of application possibilities of such devices in disposable printable electronics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 6, Issue 4, August 2005, Pages 188-192
Journal: Organic Electronics - Volume 6, Issue 4, August 2005, Pages 188-192
نویسندگان
Himadri S. Majumdar, Jayanta K. Baral, Ronald Ãsterbacka, Olli Ikkala, Henrik Stubb,