کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10566003 972154 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Fullerene-based bistable devices and associated negative differential resistance effect
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
Fullerene-based bistable devices and associated negative differential resistance effect
چکیده انگلیسی
We have observed bistability in single layer devices made from fullerenes (C60) mixed with polystyrene (PS) and sandwiched between two Al electrodes. By merely changing the concentration of C60 in PS we found three distinctly different device properties, namely a true insulator, a bistable device switching between an OFF and an ON state having ON-OFF current ratios larger than 104 and a write-once, read-many times (WORM) device. An additional negative differential resistance (NDR) was observed in the ON state of both the bistable and WORM devices leading to multilevel switching capability of the devices. This opens up a wide range of application possibilities of such devices in disposable printable electronics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 6, Issue 4, August 2005, Pages 188-192
نویسندگان
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