کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10566192 | 972251 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Insulators and device geometry in polymer field effect transistors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In order to increase the stability and practicality of polymer field effect transistor (FET) devices, different manufacturing parameters are investigated, including choice of material, processing solvent, and device geometry. It is found that the performance of the devices is closely related to the choice of gate insulator material, the applied sample configuration and the order of layer deposition. Thermally cross-linked polymers are investigated as insulator materials. For a top gate configuration the key parameter is the choice of insulator material (and solvent) while for the bottom gate configuration, device performance is largely dependent on interfacial properties, which may be controlled for example by surface treatment. This study shows that care must be taken in designing and applying the gate insulator layer of a FET.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 6, Issue 3, June 2005, Pages 142-146
Journal: Organic Electronics - Volume 6, Issue 3, June 2005, Pages 142-146
نویسندگان
Henrik G.O. Sandberg, Tomas G. Bäcklund, Ronald Ãsterbacka, Maxim Shkunov, David Sparrowe, Iain McCulloch, Henrik Stubb,