Ferroelectric random access memory based on one-transistor-one-capacitor structure for flexible electronics

► A FRAM memory cell based on 1T1C compatible with flexible electronic applications is demonstrated. ► P(VDF-TrFE) is used for the ferroelectric capacitor and CdS is used for TFTs. ► The 1T1C memory cell demonstrated achieves a memory window on the bit line of ∼2.3 V.