Solution-processed low leakage organic field-effect transistors with self-pattern registration based on patterned dielectric barrier

► Novel architecture of solution-processed organic field-effect transistor (OFET). ► Hydrophobic patterned dielectric barrier with a cavity for active region. ► Reduction of the leakage current by screening out the vertical charge flow. ► Self-pattern registration of soluble organic material by the selective wettability. ► The physical origin of the leakage current in the OFET was systematically analyzed.