Analysis of the hysteresis in organic thin-film transistors with polymeric gate dielectric

► A relationship between the hysteresis in the Id-Vg curves and the Ig was found. ► We studied transistors using either PVA or PVA cross-linked as the gate dielectric. ► The charge motion is blocked by insertion of SiO2 between the PVA layer and the gate. ► SCLC characterization of the dielectrics and simulations of the devices were performed. ► Analysis of the chemical nature of the pentacene-dielectric interface is presented.