Electronic structure of transparent conducting Mo-doped indium oxide films grown by polymer assisted solution process

Transparent conducting properties of molybdenum doped indium oxide thin films by polymer-assisted solution (PAS) were investigated as a function of Mo doping concentration. Indium oxide films with molybdenum of ~1.5% (MIO) showed lowest electrical resistivity with 7.89×10−4Ωcm, compared to those of indium oxide films with 4.39×10−3Ωcm. The enhancement of the transparent conducting properties by molybdenum doping were explained by the electronic structure in terms of chemical bonding states, band edge states below the conduction band, and band alignment. Molybdenum doping into indium oxide films resulted in the evolution of the conduction band and the change of band alignment.