Enhanced energy-storage performance of 0.94NBT-0.06BT thin films induced by a Pb0.8La0.1Ca0.1Ti0.975O3 seed layer

0.94(Na0.5Bi0.5TiO3)-0.06BaTiO3 ferroelectric thin films with and without the Pb0.8La0.1Ca0.1Ti0.975O3 seed layer were deposited on platinum-buffered silicon substrates by using Sol-Gel process. The influence of Pb0.8La0.1Ca0.1Ti0.975O3 seed layer and annealing temperatures on the microstructures, ferroelectric properties and energy-storage performances of the as-prepared films were investigated in details. The low annealing temperature and Pb0.8La0.1Ca0.1Ti0.975O3 seed layer could improve the values of electric break-down field strength and Pmax-Pr, which play a vital role for high recoverable energy-storage density. Owing to the high electric break-down field strength value of 3310 kV/cm, a large recoverable energy density of W=17.2 J/cm3 and a high energy efficiency of η=74.3% were obtained for the 0.94(Na0.5Bi0.5TiO3)-0.06BaTiO3 thin film with the Pb0.8La0.1Ca0.1Ti0.975O3 seed layer, which was annealed at 450 °C.