کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10624153 | 989584 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Performance enhancement in InZnO thin-film transistors with compounded ZrO2-Al2O3 nanolaminate as gate insulators
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Performance enhancement in InZnO thin-film transistors with compounded ZrO2-Al2O3 nanolaminate as gate insulators Performance enhancement in InZnO thin-film transistors with compounded ZrO2-Al2O3 nanolaminate as gate insulators](/preview/png/10624153.png)
چکیده انگلیسی
We fabricated compounded ZrO2-Al2O3 nanolaminate dielectrics by the atomic layer deposition (ALD) and used them to successfully integrate the high-performance InZnO (IZO) thin-film transistors (TFTs). It is found that nanolaminate dielectrics combine the advantages of constituent dielectrics and produce TFTs with improved performance and stability compared to single-layer gate insulators. The mobility in IZO-TFT was enhanced about 22% by using ZrO2-Al2O3 gate insulators and the stability was also improved. The transfer characteristics of IZO-TFTs at different temperatures were also investigated and temperature stability enhancement was observed for the TFT with ZrO2-Al2O3 nanolaminates as gate insulators. A larger falling rate (â¼1.45Â eV/V), a lower activation energy (Ea, â¼1.38Â eV) and a smaller density-of-states (DOS) were obtained based on the temperature-dependent transfer curves. The results showed that temperature stability enhancement in InZnO thin-film transistors with ZrO2-Al2O3 nanolaminate as gate insulators was attributed to the smaller DOS.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 42, Issue 7, 15 May 2016, Pages 8115-8119
Journal: Ceramics International - Volume 42, Issue 7, 15 May 2016, Pages 8115-8119
نویسندگان
Jianhua Zhang, Xingwei Ding, Jun Li, Hao Zhang, Xueyin Jiang, Zhilin Zhang,