کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10624454 | 989594 | 2016 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Determination of strain, site occupancy, photoluminescent, and thermoluminescent-trapping parameters of Sm3+-doped NaSrB5O9 microstructures
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Monoclinic NaSrB5O9:Sm3+ phosphors were synthesized by a conventional solid-state reaction method in air. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) studies revealed that the Sm3+ ions preferably occupy Sr2+ cation sites in the NaSrB5O9 host lattice. The doping-dependent crystallite size and lattice strain on the X-ray peak broadening of the NaSrB5O9:Sm3+ phosphor was determined by the Scherrer and Williamson-Hall (W-H) methods. Trigonally and tetrahedrally coordinated boron atoms in the phosphors were confirmed by confocal Raman analysis. Under near-UV excitation (402Â nm), the NaSrB5O9:Sm3+ phosphors emitted reddish-orange light at 604 nm that corresponds to the 4G5/2â6H7/2 transition. The concentration quenching mechanism between the two Sm3+ ions within the host was proved to be the dipole-dipole interaction, and the critical distance was found to be 22.29Â Ã
. The fitted luminescence decay curves in terms of a second-order exponential model suggest that the Sm3+ ions possess two different kinds of environments in the host lattice, which was supported by XPS analysis. The defects acting as trapping centers were investigated by thermoluminescence glow curves. The γ-irradiated NaSrB5O9:Sm3+ phosphors show two major dosimetric glow peaks centered at about 188.83 and 378.66 °C, indicating two different kinds of trapping centers in the phosphors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 42, Issue 1, Part B, January 2016, Pages 1234-1245
Journal: Ceramics International - Volume 42, Issue 1, Part B, January 2016, Pages 1234-1245
نویسندگان
B. Ramesh, G. Devarajulu, B. Deva Prasad Raju, G. Bhaskar Kumar, G.R. Dillip, A.N. Banerjee, S.W. Joo,