Influence of laser power on orientation, microstructure and electrical performance of YBa2Cu3O7−x film prepared on (001) SrTiO3 single crystal substrate by spray atomizing and coprecipitating laser chemical vapor deposition

YBa2Cu3O7−x film was prepared on (001) SrTiO3 single crystal substrate by spray atomizing and coprecipitating laser chemical vapor deposition. At laser power of 101-116 W (corresponding deposition temperature was 893-942 K), a-axis-oriented YBa2Cu3O7−x film was prepared, which showed an epitaxial growth mode of YBa2Cu3O7−x [100]‖SrTiO3 [001] (YBa2Cu3O7−x [001]‖SrTiO3 [100]). The a-axis-oriented YBa2Cu3O7−x film had critical temperature of 75-82 K, with critical current density from 0 to 0.4 MA cm−2. At laser power of 167-181 W (corresponding deposition temperature was 1093-1154 K), c-axis-oriented YBa2Cu3O7−x film was obtained, whose epitaxial growth mode was YBa2Cu3O7−x [001]‖SrTiO3 [001] (YBa2Cu3O7−x [100]‖SrTiO3 [100]). A c-axis-oriented YBa2Cu3O7−x film prepared at a deposition rate of 14 μm h−1 showed a high critical temperature of 91 K and critical current density of 2.8 MA cm−2.