کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10624910 | 989612 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation of (100)-oriented CeO2 film on (100) MgO single crystal substrate by laser chemical vapor deposition using solid precursor
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Preparation of (100)-oriented CeO2 film on (100) MgO single crystal substrate by laser chemical vapor deposition using solid precursor Preparation of (100)-oriented CeO2 film on (100) MgO single crystal substrate by laser chemical vapor deposition using solid precursor](/preview/png/10624910.png)
چکیده انگلیسی
(100)-oriented CeO2 films were prepared on (100) MgO single crystal substrate by laser chemical vapor deposition. A (100)-oriented CeO2 film showed a full width at half maximum value of 1.0° of the Ï-scan on the (200) reflection and that of 2.1° of the Ï-scan on the (220) reflection, respectively. The (100)-oriented CeO2 films showed cube-on-cube epitaxial growth and had rectangular grains in surface and columnar grains in cross section. The deposition rate of the (100)-oriented CeO2 films were 16-24 μm hâ1.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 40, Issue 10, Part A, December 2014, Pages 15919-15923
Journal: Ceramics International - Volume 40, Issue 10, Part A, December 2014, Pages 15919-15923
نویسندگان
Pei Zhao, Zhiliang Huang, Yangwu Mao, Ying Wang, Goto Takashi,