کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10624980 | 989613 | 2014 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Selective growth and characterization of gallium nitride nanowires through an N-Ga2O3 layer
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Selective growth and characterization of gallium nitride nanowires through an N-Ga2O3 layer Selective growth and characterization of gallium nitride nanowires through an N-Ga2O3 layer](/preview/png/10624980.png)
چکیده انگلیسی
GaN nanowires were synthesized on sapphire substrates by chemical vapor deposition. The selective growth of GaN nanowires was obtained through an N-Ga2O3 layer prepared by radio frequency magnetron sputtering. The X-ray diffraction (XRD) and Raman measurements indicated the GaN nanowires to be all indexed to the hexagonal wurtzite structure. The photoluminescence (PL) spectra were composed of a strong UV emission peak (365Â nm) and a weak yellow luminescence (YL) band (~600Â nm). The selective growth mechanism of GaN nanowires was briefly discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 40, Issue 9, Part A, November 2014, Pages 13967-13970
Journal: Ceramics International - Volume 40, Issue 9, Part A, November 2014, Pages 13967-13970
نویسندگان
Rui Sun, Hua-Yu Zhang, Gui-Gen Wang, Jie-Cai Han, Can Zhu, Xiao-Peng Liu, Lin Cui,