About the defect structure in differently doped PZT ceramics: A temperature dependent positron lifetime study

Pure and doped PZT ceramics (PZT:La+Fe, PZT:La, PZT:Gd, PIC 151 and with 0.1, 0.25, 0.5, 1.0 mol% Fe doped samples) have been examined by Positron Annihilation Lifetime Spectroscopy (PALS) in the range of temperatures between 150 and 375 K. It was found that the defect-related lifetime increased with increasing temperature, indicating vacancy-like defects. With increasing Fe doping, a loss of vacancy agglomerations was observed, as well as a weaker dependence of lifetime on temperature.