Pulsed rf magnetron sputtered alumina thin films

Alumina thin films were deposited on titanium (Ti) and fused quartz by both direct and reactive pulsed rf magnetron sputtering techniques. X-ray diffraction, field emission scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy were utilized to study the phases and surface morphology of the films. The as-deposited alumina thin films were amorphous. However, after annealing at 500 °C in vacuum, the crystalline peaks corresponding to the Theta (θ), Delta (δ) and Chi (χ) alumina phases were obtained. The optical transmittance and reflectance as well as IR emittance data were also evaluated for the thin films. The transmittance, e.g., (~90%) of the bare quartz substrate was not changed even when the alumina thin films were deposited for an hour. However, further increase in deposition time (e.g., 7 h) of the alumina thin films showed only a marginal decrease (e.g., ~5%) in average transmittance of the bare quartz substrate. The direct and indirect optical band gaps and extinction coefficient of the alumina films were estimated from the transmittance spectra. The IR emittance of the Ti substrate (e.g., ~16%) was almost constant after depositing alumina thin films for an hour. Further increase in deposition time showed only a marginal increase (e.g., ~9%) in IR emittance value. Therefore, it is proposed that the alumina films developed in the present work can act as a protective cover for the Ti substrate while retaining the thermo-optical properties of the same. The nanohardness and Young׳s modulus of the alumina thin films were evaluated by the novel nanoindentation technique. The nanohardness was measured as ~6 GPa. Further, Young׳s modulus was evaluated as ~116 GPa. The magnitudes of the nanomechanical properties of the thin films were a little smaller than those reported in the literature. This was linked to the lack of crystalline phases in the as-deposited alumina thin films.