کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10625276 | 989622 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of double-layered Al2O3/SiO2 dielectric materials on In-Ga-Zn-O(IGZO)-based amorphous transparent thin film transistors
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of double-layered Al2O3/SiO2 dielectric materials on In-Ga-Zn-O(IGZO)-based amorphous transparent thin film transistors Effect of double-layered Al2O3/SiO2 dielectric materials on In-Ga-Zn-O(IGZO)-based amorphous transparent thin film transistors](/preview/png/10625276.png)
چکیده انگلیسی
A double-layered Al2O3/SiO2 dielectric structure was applied to In-Ga-Zn-O-based amorphous thin film transistors through the atomic layer deposition (ALD) of aluminum oxide combined with thermally grown SiO2 dielectrics. The presence of ALD-based Al2O3 increased the on/off current ratio, decreased the sub-threshold slope, and decreased the threshold voltage. However, the addition of Al2O3 increased the turn-on voltage and slightly and adversely decreased the mobility. The device features appear to be associated with the presence of high-k Al2O3, which results in newly formed interfaces, oxide integrity, and high charge storage capabilities. The performance of the optimized thin film transistor is shown with the 50Â nm Al2O3/50Â nm SiO2 dielectric structure, which has a threshold voltage of 8.67Â V, a turn-on voltage of 5.09Â V, an on/off current ratio of 5.12Ã109 and a sub-threshold slope of 0.23Â V/decade.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 40, Issue 8, Part B, September 2014, Pages 12917-12922
Journal: Ceramics International - Volume 40, Issue 8, Part B, September 2014, Pages 12917-12922
نویسندگان
Chan-Rok Park, Jin-Ha Hwang,