Dielectric tunability of highly (l00)-oriented Fe-doped Na0.5Bi0.5TiO3 thin film

Highly (l00)-oriented Na0.5Bi0.5(Ti0.99Fe0.01)O3−δ (NBTFe) thin film was deposited on LaNiO3(100)/Si substrate via a chemical solution decomposition process. A high dielectric tunability of 29.36% for the NBTFe thin film is obtained at the optimum voltage (20 V) and frequency (100 kHz). The NBTFe film shows a dielectric constant of 400, dissipation factor of 0.122 and figure of merit of 4.78 at 100 kHz by the measurements of dielectric constant and dissipation factor as a function of frequency. These results demonstrate that the NBTFe thin film has a strong potential for utilization in tunable devices.