کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10625879 | 989637 | 2013 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Co-fired AlN-TiN assembly as a new substrate technology for high-temperature power electronics packaging
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Co-fired AlN-TiN assembly as a new substrate technology for high-temperature power electronics packaging Co-fired AlN-TiN assembly as a new substrate technology for high-temperature power electronics packaging](/preview/png/10625879.png)
چکیده انگلیسی
New wide-band gap semiconductors (SC) for power electronics such as SiC, GaN and diamond will allow higher power densities, leading to higher operating temperatures. However, the surrounding materials will also undergo an increase in temperature, meaning that a parallel effort is needed in SC packaging technologies research. One of the essential components, the substrate, is used to insulate electrically the SC from the rest of the system, drain the generated heat and provide a path to connect the SC to the rest of the system. Direct bonded copper (DBC) and active metal-brazed (AMB) substrates have limited temperature and cycling operation, owing to the large differences in the thermal expansion coefficients between the ceramics and the metals. In this work we propose a new and original substrate technology based on two co-sintered ceramics: an insulating ceramic (AlN) and a conductive one (TIN). The microstructure, the chemical compatibility and the electrical properties indicate that the proposed substrate could operate at a temperature above 200 °C the current substrate technologies, which makes it particularly attractive for high-temperature power electronics applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 39, Issue 8, December 2013, Pages 8743-8749
Journal: Ceramics International - Volume 39, Issue 8, December 2013, Pages 8743-8749
نویسندگان
Zarel Valdez-Nava, Sophie Guillemet-Fritsch, Marc Ferrato, Masahiro Kozako, Thierry Lebey,