Comparison of the microstructures and ferroelectric characteristics of sputter deposited PZT films with and without lead or lead oxide for compensation

The success in depositing perovskite PZT films using a Pb/PZT and PbO/PZT dual-target sputtering system presents the possibility of processing windows of substrate temperature between 500 °C and 580 °C. Structural change as a function of deposition conditions and lead sources correlated with ferroelectric characteristics.