کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10626565 | 989690 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of La on electronic structure of α-Al2O3 high k-gate from first principles
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
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چکیده انگلیسی
The theoretical effects of La on electronic structure of Al2O3 high k-gate have been studied by first principles. The electronic properties of pure α-Al2O3 and La aluminates (Al2âxLaxO3, x = 0.50) were studied by using the density functional theory. The calculations were performed by the full potential-linearized augmented plane wave (FP-LAPW) method with the generalized gradient approximation (GGA). The calculated electronic structure and charge density yield a band gap of â¼6.4 eV for pure α-Al2O3 (without empirical correction factor) at the Î point in the Brillouin zone, fairly close to experimental values. The substitution of La reduces the band gap to â¼3.6 eV for Al1.5La0.5O3. The calculated density of states (DOS) of α-Al2O3 is in good agreement with recent experimental XPS and XES data.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 31, Issue 5, 2005, Pages 671-675
Journal: Ceramics International - Volume 31, Issue 5, 2005, Pages 671-675
نویسندگان
S.M. Hosseini, H.A. Rahnamaye Aliabad, A. Kompany,