Microstructure and electrical properties mediated by defects in Na0.5Bi0.5Ti0.98Mn0.02O3 thin film under different annealing atmospheres

Na0.5Bi0.5Ti0.98Mn0.02O3 (NBTMn) thin films were deposited on the indium tin oxide/glass substrates annealed under various atmospheres (N2, air, O2) using chemical solution deposition. The effect of annealing atmosphere on microstructure and electrical properties were investigated. All the NBTMn thin films crystallize into the single-phase rhombohedral distorted perovskite structure with a competitive growth mode among various orientations. With the decrease of the content for oxygen vacancies in O2, the improved insulating property and enhanced ferroelectricity (Pr = 38 μC/cm2) can be obtained in NBTMn thin film. Also, the relative dielectric constant and loss tangent are 501 and 0.04 at 100 kHz, respectively. The evolution of performances for NBTMn film annealed at different ambiences can be analyzed in terms of defect dipoles and free oxygen vacancies based on defect chemistry.