Photosensitivity of pulsed laser deposited Ge20As20Se60 and Ge10As30Se60 amorphous thin films

- Amorphous Ge20As20Se60/Ge10As30Se60 films are fabricated by pulsed laser deposition.
- Photosensitivity of the layers is studied by employing spectroscopic ellipsometry.
- As-deposited/relaxed thin films were irradiated by 593, 635, and 660 nm lasers.
- Ge20As20Se60 layers present almost zero photorefraction in relaxed state.