کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10632010 992377 2005 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
La-substitution Bi2Ti2O7 thin films grown by chemical solution deposition
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
La-substitution Bi2Ti2O7 thin films grown by chemical solution deposition
چکیده انگلیسی
(La0.05Bi0.95)2Ti2O7 (LBTO) thin films had been successfully prepared on P-type Si substrate by chemical solution deposition method. The structural properties of the films were studied by X-ray diffraction. The phase of (La0.05Bi0.95)2Ti2O7 is more stable than the phase of Bi2Ti2O7 without La substitution. The films exhibited good insulating properties with room temperature resistivities in the range of 1012-1013 Ω cm. The dielectric constant of the film annealed at 550 °C at 100 kHz was 157 and the dissipation factor was 0.076. The LBTO thin films can be used as storage capacitors in DRAM.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Research Bulletin - Volume 40, Issue 5, 18 May 2005, Pages 724-730
نویسندگان
, , , ,