کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10632059 | 992381 | 2005 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Microwave synthesis of phase-pure, fine silicon carbide powder
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Microwave synthesis of phase-pure, fine silicon carbide powder Microwave synthesis of phase-pure, fine silicon carbide powder](/preview/png/10632059.png)
چکیده انگلیسی
Fine, monophasic silicon carbide powder has been synthesized by direct solid-state reaction of its constituents namely silicon and carbon in a 2.45 GHz microwave field. Optimum parameters for the silicon carbide phase formation have been determined by varying reaction time and reaction temperature. The powders have been characterized for their particle size, surface area, phase composition (X-ray diffraction) and morphology (scanning electron microscope). Formation of phase-pure silicon carbide can be achieved at 1300 °C in less than 5 min of microwave exposure, resulting in sub-micron-sized particles. The free energy values for Si + C â SiC reaction were calculated for different temperatures and by comparing them with the experimental results, it was determined that phase-pure silicon carbide can be achieved at around 1135 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Research Bulletin - Volume 40, Issue 10, 6 October 2005, Pages 1871-1882
Journal: Materials Research Bulletin - Volume 40, Issue 10, 6 October 2005, Pages 1871-1882
نویسندگان
L.N. Satapathy, P.D. Ramesh, Dinesh Agrawal, Rustum Roy,