کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10632134 992387 2005 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Preparation and characterization of Ba1 − xSrxTiO3 thin films deposited on Pt/SiO2/Si by sol-gel method
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Preparation and characterization of Ba1 − xSrxTiO3 thin films deposited on Pt/SiO2/Si by sol-gel method
چکیده انگلیسی
BST thin films have been investigated as potential candidates for use in frequency agile microwave circuit devices. Stoichiometric (Ba1 − xSrx)TiO3 (BST) thin films have been prepared on Pt/SiO2/Si substrates using sol-gel method. The BST films were characterized by X-ray fluorescence (XRF) spectroscopy analysis, X-ray diffraction (XRD), scanning electron microscope (SEM) and electrical measurements. The relationships of processing parameters, microstructures, and dielectric properties are discussed. The results show that the films exhibit pure perovskite phase through rapid thermal anneal at 700 °C and their grain sizes are about 20-40 nm. The dielectric constants of BST5, BST10, BST15 and BST20 are 323, 355, 382 and 405, respectively, at 80 kHz.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Research Bulletin - Volume 40, Issue 9, 1 September 2005, Pages 1490-1496
نویسندگان
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