کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10632199 992393 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Formation of Si nanocrystals utilizing a Au nanoscale island etching mask
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Formation of Si nanocrystals utilizing a Au nanoscale island etching mask
چکیده انگلیسی
Si nanocrystals were formed by using a Au nanoscale island etching mask. A high-resolution transmission electron microscopy image showed that the Si nanocrystals were created on a SiOx layer, and the luminescence peak related to Si nanocrystals was observed in the cathodoluminescence spectrum. Capacitance-voltage measurements demonstrate a metal-insulator-semiconductor behavior with a flatband voltage shift for the Al/SiO2/nanocrystalline Si/SiO2/p-Si structures, indicative of the existence of the Si nanocrystals embedded into the SiOx layer. These results indicate that Si nanocrystals embedded into the SiOx layer can be formed by using a Au island etching mask.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Research Bulletin - Volume 40, Issue 1, 4 January 2005, Pages 193-198
نویسندگان
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