کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10638238 | 995413 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photoluminescence in manganese indium sulphide thin films deposited by chemical spray pyrolysis
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Photoluminescence measurements on manganese indium sulphide thin films were carried out and the temperature dependence of the Pl emission band was studied. A Gaussian shaped Pl band centered at 535Â nm was observed at 10Â K. A study on the variation of InCl3 concentration in spray solution over the Pl energy band position and shape suggests that varying InCl3 concentration in the solution or by changing the In3+ composition in the film during growth does not affect Pl maxima position on energy axis whereas a reduction in the Pl peak intensity was noticed with decreasing InCl3 solution concentration. Based on the luminescence data donor level height in the manganese indium sulphide energy gap was estimated and found to be around 20Â meV; that again on reduction in InCl3 concentration in solution found to decreases marginally.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 92, Issue 1, 15 July 2005, Pages 240-244
Journal: Materials Chemistry and Physics - Volume 92, Issue 1, 15 July 2005, Pages 240-244
نویسندگان
R.K. Sharma, S.T. Lakshmikumar, Gurmeet Singh, A.C. Rastogi,