Transient photocurrents as a spatially resolved probe of carrier transport and defect distributions in silicon thin films

► Transient photocurrents were measured in amorphous and microcrystalline silicon. ► The electronic density of states was calculated from photocurrent transients. ► A computer model confirmed depth-dependence with laser pulse wavelength. ► In amorphous silicon light-soaking modifies the electronic defect profile. ► In microcrystalline silicon a seed layer modifies growth correlated to defect density.