کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10639996 | 995864 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
InGaN/GaN multi-quantum wells near ultraviolet light-emitting diodes (LEDs) were fabricated on a patterned sapphire substrate (PSS) with parallel stripe along the ã11¯00ãsapphire direction by using low-pressure metal-organic chemical vapor deposition (MOCVD). The forward- and reverse-bias electrical characteristics of the stripe PSS LEDs are, respectively, similar and better than those of conventional LEDs on sapphire substrate. The output power of the epoxy package of stripe PSS LED was 20% higher than that of the conventional LEDs. The enhancement of output power is due not only to the reduction of dislocation density but also to the release of the guided light in LEDs by the geometric shape of the stripe PSS, according to the ray-tracing analysis.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 122, Issue 3, 25 September 2005, Pages 184-187
Journal: Materials Science and Engineering: B - Volume 122, Issue 3, 25 September 2005, Pages 184-187
نویسندگان
Y.J. Lee, T.C. Hsu, H.C. Kuo, S.C. Wang, Y.L. Yang, S.N. Yen, Y.T. Chu, Y.J. Shen, M.H. Hsieh, M.J. Jou, B.J. Lee,