کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10640112 | 995872 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation of ultra-high purity CdTe single crystals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Preparation of ultra-high purity CdTe single crystals Preparation of ultra-high purity CdTe single crystals](/preview/png/10640112.png)
چکیده انگلیسی
High-purity and quality CdTe single crystals are very important for their basic study, as well as practical applications. For this reason, Cd was purified by vacuum distillation (VD) and overlap zone-melting (OZM) method, and Te was purified by normal freezing method. Refined Cd was evaluated by glow discharge mass spectroscopy (GDMS) and residual resistivity ratio (RRR) measurement and Te was evaluated by low-temperature photoluminescence (PL) spectra. Results showed that refined Cd and Te have the purity of 6N-up. Using the refined Cd and Te as starting materials, extremely high-purity CdTe single crystals were prepared by the traditional vertical Bridgman technique. The crystals were characterized by low temperature high-resolution PL spectroscopy. Only a sharp peak at 1.5896Â eV was detected in exciton emission region. The full width at half-maximum (FWHM) is less than 0.31Â meV. These results indicate that the CdTe crystals are of extremely high-purity and quality.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 117, Issue 3, 25 March 2005, Pages 271-275
Journal: Materials Science and Engineering: B - Volume 117, Issue 3, 25 March 2005, Pages 271-275
نویسندگان
J.F. Wang, S.H. Song, Y. Ishikawa, M. Isshiki,